API field
Recombination loss term (d²/μτ)
Thin-film recombination loss term
Unit V
What it is
A term in volts that adds a recombination current to the circuit model of thin-film modules: d is the thickness of the intrinsic layer and μτ the product of the carrier mobility and lifetime. The term acts against the built-in voltage of the cells, 0.9 V per cell in series.
Typical values and how to get it
0 for crystalline silicon; for cadmium telluride, amorphous silicon and CIS modules, the value of the PAN file. If not given: 0 V: no recombination term.
References
- Mermoud & Lejeune 2010, Performance assessment of a simulation model for PV modules of any available technology, 25th European Photovoltaic Solar Energy Conference
API
module.d2_mu_tau